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| Brand Name: | PRECISE INSTRUMENT |
| MOQ: | 1 unit |
| Delivery Time: | 2-8 weeks |
| Payment Terms: | T/T |
10Hz-1MHz Semiconductor Device C-V Testing System
Capacitance-Voltage (C-V) Measurement is widely used to characterize semiconductor parameters, particularly in MOS capacitors (MOS CAPs) and MOSFET structures. The capacitance of a metal-oxide-semiconductor (MOS) structure is a function of the applied voltage. The curve depicting capacitance variation with voltage is termed the C-V curve (or C-V characteristics). This measurement enables precise determination of critical parameters, including:
· Oxide layer thickness (dox)
· Substrate doping concentration (Nn)
· Mobile charge density in the oxide (Q1)
· Fixed oxide charge density (Qfc).
Product Features
▪ Wide Frequency Range: 10 Hz–1 MHz with continuously adjustable frequency points.
▪ High Precision & Broad Dynamic Range: 0 V–3500 V bias range with 0.1% accuracy.
▪ Built-in CV Testing: Integrated automated CV testing software supports multiple functions, including C-V (capacitance-voltage), C-T (capacitance-time), and C-F (capacitance-frequency).
▪ IV Testing Compatibility: Simultaneously measures breakdown characteristics and leakage current behavior.
▪ Real-Time Curve Plotting: Intuitive software interface visualizes test data and curves for real-time monitoring.
▪ High Scalability: Modular system design enables flexible configuration based on testing needs.
Product Parameters
|
Items |
Parameters |
|
Test Frequency |
10Hz-1MHz |
|
Frequency Output Accuracy |
±0.01% |
|
Basic Accuracy |
±0.5% |
|
AC Test Signal Level |
10mV~2Vrms (1m Vrms Resolution) |
|
DC Test Signal Level |
10mV~2V (1m Vrms Resolution度) |
|
Output Impedance |
100Ω |
|
Capacitance Test Range |
0.01pF – 9.9999F |
|
VGS Bias Range |
0 - ±30V(Optional ) |
|
VDS Bias Range |
300V~1200V |
|
Test Parameters |
DIODE:CJ,IR,VR MOSFET:Ciss,Coss,Crss,Rg,IDSS,IGSS,BVDSS IGBT:Cies,Coes,Cres,ICES,IGES,VBRCES |
|
Interface |
RS232,LAN |
|
Programming Protocol |
SCPI,LabView |
Applications
▪ Nanomaterials: Resistivity, Carrier Mobility, Carrier Concentration, Hall Voltage
▪ Flexible Materials:Tensile/Torsional/Bending Test, Voltage-Time (V-t), Current-Time (I-t), Resistance-Time (R-t), Resistivity, Sensitivity,Junciton Capacity.
▪ Discrete Devices:BVDSS,IGSS,IDSS,Vgs(th),Ciss/Coss/Crss (Input/Output/Reverse).
▪ Photodetectors: Dark Current (ID), Junction Capacitance (Ct), Reverse Breakdown Voltage (VBR), Responsivity (R).
▪ Perovskite Solar Cells:Open-Circuit Voltage (VOC), Short-Circuit Current (ISC),Maximum Power (Pmax), Max Power Voltage (Vmax), Max Power Current (Imax),Fill Factor (FF), Efficiency (η), Series Resistance (Rs), Shunt Resistance (Rsh),Junction Capacity.
▪ LEDs/OLEDs/QLED:,Forward Voltage (VF),Threshold Current (Ith), Reverse Voltage (VR), Reverse Current (IR),Juntion Capacity.
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| Brand Name: | PRECISE INSTRUMENT |
| MOQ: | 1 unit |
| Packaging Details: | Carton. |
| Payment Terms: | T/T |
10Hz-1MHz Semiconductor Device C-V Testing System
Capacitance-Voltage (C-V) Measurement is widely used to characterize semiconductor parameters, particularly in MOS capacitors (MOS CAPs) and MOSFET structures. The capacitance of a metal-oxide-semiconductor (MOS) structure is a function of the applied voltage. The curve depicting capacitance variation with voltage is termed the C-V curve (or C-V characteristics). This measurement enables precise determination of critical parameters, including:
· Oxide layer thickness (dox)
· Substrate doping concentration (Nn)
· Mobile charge density in the oxide (Q1)
· Fixed oxide charge density (Qfc).
Product Features
▪ Wide Frequency Range: 10 Hz–1 MHz with continuously adjustable frequency points.
▪ High Precision & Broad Dynamic Range: 0 V–3500 V bias range with 0.1% accuracy.
▪ Built-in CV Testing: Integrated automated CV testing software supports multiple functions, including C-V (capacitance-voltage), C-T (capacitance-time), and C-F (capacitance-frequency).
▪ IV Testing Compatibility: Simultaneously measures breakdown characteristics and leakage current behavior.
▪ Real-Time Curve Plotting: Intuitive software interface visualizes test data and curves for real-time monitoring.
▪ High Scalability: Modular system design enables flexible configuration based on testing needs.
Product Parameters
|
Items |
Parameters |
|
Test Frequency |
10Hz-1MHz |
|
Frequency Output Accuracy |
±0.01% |
|
Basic Accuracy |
±0.5% |
|
AC Test Signal Level |
10mV~2Vrms (1m Vrms Resolution) |
|
DC Test Signal Level |
10mV~2V (1m Vrms Resolution度) |
|
Output Impedance |
100Ω |
|
Capacitance Test Range |
0.01pF – 9.9999F |
|
VGS Bias Range |
0 - ±30V(Optional ) |
|
VDS Bias Range |
300V~1200V |
|
Test Parameters |
DIODE:CJ,IR,VR MOSFET:Ciss,Coss,Crss,Rg,IDSS,IGSS,BVDSS IGBT:Cies,Coes,Cres,ICES,IGES,VBRCES |
|
Interface |
RS232,LAN |
|
Programming Protocol |
SCPI,LabView |
Applications
▪ Nanomaterials: Resistivity, Carrier Mobility, Carrier Concentration, Hall Voltage
▪ Flexible Materials:Tensile/Torsional/Bending Test, Voltage-Time (V-t), Current-Time (I-t), Resistance-Time (R-t), Resistivity, Sensitivity,Junciton Capacity.
▪ Discrete Devices:BVDSS,IGSS,IDSS,Vgs(th),Ciss/Coss/Crss (Input/Output/Reverse).
▪ Photodetectors: Dark Current (ID), Junction Capacitance (Ct), Reverse Breakdown Voltage (VBR), Responsivity (R).
▪ Perovskite Solar Cells:Open-Circuit Voltage (VOC), Short-Circuit Current (ISC),Maximum Power (Pmax), Max Power Voltage (Vmax), Max Power Current (Imax),Fill Factor (FF), Efficiency (η), Series Resistance (Rs), Shunt Resistance (Rsh),Junction Capacity.
▪ LEDs/OLEDs/QLED:,Forward Voltage (VF),Threshold Current (Ith), Reverse Voltage (VR), Reverse Current (IR),Juntion Capacity.
Video
Video
Video
